The Blue Light-Emitting Diodes
AUTHOR | Lee Hyung-Jae; Hahn Yoon-Bong; Choi Rak-Jun |
PUBLISHER | VDM Verlag (06/23/2010) |
PRODUCT TYPE | Paperback (Paperback) |
Description
In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.
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Product Format
Product Details
ISBN-13:
9783639268195
ISBN-10:
3639268199
Binding:
Paperback or Softback (Trade Paperback (Us))
Content Language:
English
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Page Count:
156
Carton Quantity:
52
Product Dimensions:
6.00 x 0.36 x 9.00 inches
Weight:
0.52 pound(s)
Country of Origin:
US
Subject Information
BISAC Categories
Technology & Engineering | Electronics - General
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publisher marketing
In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.
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